| 主要论文 |
2007年以来发表代表性论文如下（*为通讯作者）： [1] S. Yang, C. Wang, H. Sahin, H. Chen, Y. Li, S. Li, A. Suslu, F. Peeters, Q. Liu*, Jingbo Li*, S. Tongay*, “Tuning the Optical, Magnetic, and Electrical Properties of ReSe2 by Nanoscale Strain Engineering”, Nano Letters, 15,1660 (2015). [2] B. Li, L. Huang, M. Zhong, N. J. Huo, Y. T. Li, S. Yang, C. Fan, J. Yang, W. P. Hu, Z. M. Wei* and Jingbo Li*, “Synthesis and Transport Properties of Large-Scale Alloy Co0.16Mo0.84S2 Bilayer Nanosheets”, ACS Nano, 9,1257 (2015). [3] N. J. Huo, J. H. Yang, L. Huang, Z. M. Wei, S.-S. Li, S.-H. Wei,* and Jingbo Li.*, “Tunable Polarity Behavior and Self-Driven Photoswitching in p-WSe2/n-WS2 Heterojunctions”, Small, (2015), online, DOI: 10.1002/smll.201501206. [4] J. H. Yang, N. J. Huo, Y. Li, X.-W. Jiang, T. Li, R. X. Li, F. Y. Lu, C. Fan, B. Li, Kasper Nørgaard, B. W. Laursen, Z. M. Wei,* Jingbo Li,* and S.-S. Li, “Gate-Tunable Ultra-High Photoresponsivity of 2D Heterostructures based on Few Layer MoS2 and Solution-Processed rGO”, Adv. Electron. Mater., (2015), accepted, DOI: 10.1002/aelm.201500267. [5] L. Huang, N. J. Huo, Y. Li, H. Chen, J. H. Yang, Z. M. Wei,* Jingbo Li,* and S.-S. Li, “Electric-Field Tunable Band Offsets in Black Phosphorus and MoS2 van der Waals p-n Heterostructure”, J. Phys. Chem. Lett., 6, 2483 (2015). [6] F. Lu, J. H. Yang, R. X. Li, N. J. Huo, Y. T. Li, Z. M. Wei* and Jingbo Li*, “Gas-dependent photoresponse of SnS nanoparticles-based photodetectors”, J. Mater. Chem. C, 3, 1397 (2015). [7] N. J. Huo, Z. M. Wei, X. Meng, J. Kang, F. Wu, S.-S. Li, S.-H. Wei,* Jingbo Li*, “Interlayer coupling and optoelectronic properties of ultrathin two-dimensional heterostructures based on graphene, MoS2 and WS2”, J. Mater. Chem. C, 3, 5467 (2015). [8] F. Lu, R. X. Li, Y. Li, N. J. Huo, J. H. Yang, Y. T. Li, B. Li, S. X. Yang, Z. M. Wei* and Jingbo Li*, “Improving the Field-Effect Performance of Bi2S3 Single Nanowires by an Asymmetric Device Fabrication”, ChemPhysChem, 16, 99 (2015). [9] Z. M. Zhong, Z. M. Wei*, X. Q. Meng, F. M. Wu, Jingbo Li*, “Ultra-sensitive humidity sensors based on ZnSb2O4 nanoparticles”, RSC Adv., 5, 2429 (2015). [10]S. Tongay, H. Sahin, C. Ko, A. Luce, W. Fan, K. Liu, J. Zhou, Y. S. Huang, C. H. Ho, J. Yan, D. F. Ogletree, S. Aloni, J. Ji, S. S. Li, Jingbo Li, F. M. Peeters, and J. Wu*, “Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling”, Nature Communications, 5,3252 (2014). [11]N. J. Huo, J. Kang, Z. M. Wei, S. S. Li, Jingbo Li* and S. H. Wei*, “Novel and Enhanced Optoelectronic Performances of Multilayer MoS2-WS2 Heterostructure Transistors”, Adv. Funct. Mater., 24, 7025 (2014). [12]N. J. Huo, S. X. Yang, Z. M. Wei, S. S. Li, J. B. Xia, Jingbo Li*, “Photoresponsive and Gas Sensing Field-Effect Transistors based on Multilayer WS2 Nanoflakes”, Scientific Reports, 4, 5209 (2014). [13]S. X. Yang, Y. Li, X. Z. Wang, N. J. Huo, J. B. Xia, S. S. Li, Jingbo Li*, “High performance few-layer GaS photodetector and its unique photo-response in different gas environments”, Nanosale, 6, 2582 (2014). [14]S. X. Yang, S. Tongay, Y. Li, Q. Yue, J. B. Xia, S. S. Li, Jingbo Li* and S. H. Wei*, “Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors”, Nanosale, 6, 7226 (2014). [15]C. Fan, T. Li, Z. M. Wei*, N. J. Huo, F. Lu, J. H. Yang, R. X. Li, S. X. Yang, B. Li, W. P. Hu*, Jingbo Li*, “Novel Micro-Rings of MoS2”, Nanosale, 6, 14652 (2014). [16]J. H. Yang, F. Lu, Y. Li, S. X. Yang, R. X. Li, N. J. Huo, C. Fan, Z. M. Wei*, Jingbo Li*, S. S. Li, “Low temperature electrical transport and photoresponsive properties of H-doped MoO3 nanosheets” , J. Mater. Chem. C, 2, 1034 (2014). [17]N. J. Huo, Y. Li, J. Kang, R. Li, Q. Xia, Jingbo Li*, “Edge-states ferromagnetism of WS2 nanosheets”, Appl. Phys. Lett., 104, 202406 (2014). [18]C. Fan, Q. Yue, J. H. Yang, Z. M. Wei*, S. X. Yang, Jingbo Li*, “Low temperature electrical and photo-responsive properties of MoSe2”, Appl. Phys. Lett., 104, 202105 (2014). [19]Z. H. Chen, X. W. Jiang, S. Dong, Jingbo Li*, S. S. Li, L. W. Wang, “Insight into the photoelectron angular dependent energy distribution of negative-electron-affinity InP photocathodes”, Appl. Phys. Lett., 104, 021120 (2014). [20]S. Tongay, D. S. Narang, J. Kang, W. Fan, C. Ko, A. V. Luce, K. X. Wang, J. Suh, K. D. Patel, V. M. Pathak, Jingbo Li, J. Wu*, “Two-dimensional semiconductor alloys: Monolayer Mo1-xWxSe2”, Appl. Phys. Lett., 104, 012101 (2014). [21]Y. Li, S. X. Yang, Jingbo Li*, “Modulation of the Electronic Properties of Ultrathin Black Phosphorus by Strain and Electrical Field”, J. Phys. Chem. C., 118, 23970 (2014). [22]Z. H. Chen, Jingbo Li*, S. S. Li, L. W. Wang, “Approximate Hessian for accelerating ab initio structure relaxation by force fitting”, Phys. Rev. B 89, 144110 (2014). [23]R. X. Li, J. H. Yang, N. J. Huo, C. Fan, F. Lu, T. Yan, Z. M. Wei*, Jingbo Li*, “Effect of Electrical Contact on the Performance of Bi2S3 Single Nanowire Photodetectors”, ChemPhysChem, 15, 2510 (2014). [24]Y. Li, J. Kang, Jingbo Li*, “Indirect-to-direct band gap transition of ZrS2 monolayer by strain: first-principles calculations”, RSC Adv., 4, 7396 (2014). [25]J. H. Yang, R. X. Li, N. J. Huo, W. L. Ma, F. Lu, C. Fan, S. X. Yang, Z. M. Wei*, Jingbo Li*, and S. S. Li, “Oxygen-induced abnormal photoelectric behavior of a MoO3/graphene heterocomposite”, RSC Adv., 4, 49873 (2014). [26]F. Y. Lu, R. Li, N. J. Huo, J. Yang, C. Fan, X. Z. Wang, S. X. Yang*, Jingbo Li*, “Synthesis of the Bi2S3-Bi2O3 composites and their enhanced photosensitive property”, RSC Adv., 4, 5666 (2014). [27]C. Fan, Z. M. Wei*, S. X. Yang, Jingbo Li*, “Synthesis of MoSe2 flower-like nanostructures and its photo-responsive properties”, RSC Adv., 4, 775 (2014). [28]J. Kang, Jingbo Li, S. S. Li, J. B. Xia, and L.-W. Wang*, “Electronic structural Moiré pattern effects on MoS2/MoSe2 2D heterostructures”, Nano Letters, 13, 5485 (2013). [29]S. Tongay, J. Suh, C. Ataca, W. Fan, A. Luce, J. S. Kang, J. Liu, C. Ko, R. Raghunathanan, J. Zhou, F. Ogletree,, Jingbo Li, J. Grossman, and J. Wu*, “Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons”, Scientific Reports, 3, 2657 (2013). [30]S. Tongay, J. Zhou, C. Ataca, J. Liu, J. Kang, T. Matthews, L. You, Jingbo Li, J. Grossman, and J. Wu*, “Broad-range modulation of light emission in two-dimensional semiconductors by molecular physi-sorption gating”, Nano Letters, 13, 2831 (2013). [31]X. Q. Meng, S. Tongay, J. Kang, Z. H. Chen, F. M. Wu, S. S. Li, J. B. Xia, Jingbo Li*, and J. Wu*, “Stable p- and n-type doping of few-layer graphene/graphite”, Carbon, 57, 507 (2013). [32]J. Kang, S. Tongay, J. Zhou, Jingbo Li*, and J. Wu*, “Band offsets and Heterostructures of Two-Dimensional Semiconductors”, Appl. Phys. Lett., 102, 012111 (2013). [33]H. F. Dong, Z. G. Wu*, S. Wang, W. F. Duan, Jingbo Li*, “Improving the optical absorption of BiFeO3 for photovoltaic applications via uniaxial compression or biaxial tension”, Appl. Phys. Lett., 102, 072905 (2013). [34]H. F. Dong, C. Q. Chen, S. Wang, W. F. Duan, Jingbo Li*, “Elastic properties of tetragonal BiFeO3 from first-principles calculations”, Appl. Phys. Lett., 102, 182905 (2013). [35]H. W. Peng, Jingbo Li*, S. H. Wei, “Chemical trends of magnetic interaction in Mn-doped III-V semiconductors”, Appl. Phys. Lett., 102, 122409 (2013). [36]S. X. Yang, S. Tongay, S. S. Li, J. B. Xia, J. Wu*, Jingbo Li*, “Environmentally Stable / Self-powered UV Photodetectors with High Sensitivity”, Appl. Phys. Lett., 103, 143503 (2013). [37]X. Q. Meng, Z. H. Chen, Z. Chen, F. M. Wu, S. S. Li, Jingbo Li*, J. Wu, S.-H. Wei*, “Enhancing Structural Transition by Carrier and Quantum Confinement: Stabilization of Cubic InN Quantum Dots by Mn Incorporation”, Appl. Phys. Lett., 103, 253102 (2013). [38]Z. H. Chen, X. W. Jiang, Jingbo Li*, S. S. Li, “A sphere-cut-splice crossover for the evolution of cluster structures”, J. Chem. Phys., 138, 214303 (2013). [39]C. Li, S. X. Yang*, S. S. Li, J. B. Xia, and Jingbo Li*, “Au Decorated Silicene: Design of High Activity Catalyst toward CO Oxidation”, J. Phys. Chem. C, 117, 483 (2013). [40]H. X. Deng, S.-H. Wei, S. S. Li, Jingbo Li, A. Walsh, “Electronic origin of the conductivity imbalance between covalent and ionic amorphous semiconductors”, Phys. Rev. B, 87, 125203 (2013). [41]H. Sahin, S. Tongay, S. Horzum, W. Fan, Zhou, Jingbo Li, J. Wu, and F. M. Peeters “Anomalous Raman spectra and thickness-dependent electronic properties of WSe2”, Phys. Rev. B, 87, 165409 (2013). [42]N. J. Huo, S. X. Yang*, Z. M. Wei, Jingbo Li*, “Synthesis of WO3 nanostructures and their ultraviolet photo-response property”, J. Mater. Chem. C, 1, 3999 (2013). [43]Q. Yue, S. L. Chang, J. Kang, S. Q. Qin, and Jingbo Li*, “Mechanical and Electronic Properties of Graphyne and Its Family Under Elastic Strain: Theoretical Predictions”, J. Phys. Chem. C, 117, 14804 (2013). [44]N. J. Huo, Q. Yue, J. H. Yang, S. X. Yang*, Jingbo Li*, “Abnormal Photocurrent Response and Enhanced Photocatalytic Activity Induced by Charge Transfer between WS2 Nanosheets and WO3 Nanoparticles”, ChemPhysChem, 14, 4069 (2013). [45]X. Z. Wang, X. Q. Meng, Z. M. Zeng, F. M. Wu, Jingbo Li*, Hydrothermal synthesis of WO3·0.5H2O microtubes with excellent photocatalytic properties, Appl. Surf. Sci, 282, 826 (2013). [46]M. Z. Zhong, X. Q. Meng*, F. M. Wu, Jingbo Li*, Y. Fang, “Mo-doping-enhanced dye absorption of Bi2Se3 nanoflowers”, Nanoscale Res. Lett., 8, 451 (2013). [47]Q. Yue, Z. Z. Shao, S. L. Chang, Jingbo Li*, “Adsorption of gas molecules on monolayer MoS2 and effect of applied electric field”, Nanoscale Res. Lett., 8, 425 (2013). [48]S. Tongay, J. Zhou, C. Ataca, K. Lo, T. S. Matthews, Jingbo Li, J. C. Grossman, and J. Wu*, “Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2”, Nano Letters, 12, 5576 (2012). [49]J. Kang, F. M. Wu, S. S. Li, J. B. Xia, and Jingbo Li*, “Antiferromagnetic coupling and spin filtering in asymmetrically hydrogenated graphene nanoribbon homojunction”, Appl. Phys. Lett., 100, 153102 (2012). [50]J. Kang, F. M. Wu, and Jingbo Li*, “Symmetry-Dependent Transport Properties and Magnetoresistance in Zigzag Silicene Nanoribbons”, Appl. Phys. Lett., 100, 233122 (2012). [51]C. Li, Jingbo Li*, S. S. Li, J. B. Xia, and S.-H. Wei*, “Selection rule of preferred doping site for n-type oxides ”, Appl. Phys. Lett., 100, 262109 (2012). [52]C. Li, F. M. Wu, S. S. Li, J. B. Xia, and Jingbo Li*, “Influence of indium cluster on the high and constant background electron density in ternary InxGa1-xN alloys”, Appl. Phys. Lett., 101, 062102 (2012). [53]H. X. Deng, S. S. Li, Jingbo Li, S.-H. Wei, “Effect of hydrogen passivation on the electronic structure of ionic semiconductor nanostructures ”, Phys. Rev. B, 85, 195328 (2012). [54]Q. Yue, S. L. Chang, J. Kang, J. Tan, S. Q. Qian, and Jingbo Li*, “Symmetry-dependent transport properties and bipolar spin-filtering in zigzag α-graphyne nanoribbons”, Phys. Rev. B, 86, 2354488 (2012). [55]Q. Yue, S. L. Cheng, J. Kang, J. C. Tan, S. Q. Qin, and Jingbo Li*, “Magnetic and electronic properties ofα-graphdyne nanoribbons”, J. Chem. Phys., 136, 244702 (2012). [56]J. Kang, F. M. Wu, S. S. Li, J.-B. Xia, and Jingbo Li*, “Calculating Band Alignment between Materials with Different Structures: The case of Anatase and Rutile Titanium Dioxide”, J. Phys. Chem. C, 116, 20765 (2012). [57]C. Li, F. M. Wu, Jingbo Li*, and L.-W. Wang, “Self-Assembled Ti Quantum Wire on Zigzag Graphene Nanoribbons with One Edge Saturated”, J. Phys. Chem. C, 116, 24824 (2012). [58]J. Wang, S. S. Li, Y. Liu*, and Jingbo Li*, “Passivation of CuI Quantum Dots”, J. Phys. Chem. C, 116, 21039 (2012). [59]J. Kang, F. M. Wu, and Jingbo Li*, “Doping induced spin filtering effect in zigzag graphene nanoribbons with asymmetric edge hydrogenation”, Appl. Phys. Lett., 98, 083109 (2011). [60]W. Chen and Jingbo Li*, “Origin of the low thermal conductivity of the thermoelectric material β-Zn4Sb3: An ab initio theoretical study”, Appl. Phys. Lett., 98, 241901(2011). [61]C. Li, F. M. Wu, and Jingbo Li*, “Kinetic and relativistic effects on the surface alloy formation of Au adsorbed on Si(111)-Pb surface”, Appl. Phys. Lett., 99, 211912 (2011). [62]M. Q. Meng, F. M. Wu, and Jingbo Li*, “Study on optical properties of type-II SnO2/ZnO core/shell nanowires”, J. Phys. Chem. C, 115, 7225 (2011). [63]J. Kang, Jingbo Li*, F. M. Wu, S. S. Li, J. B. Xia, L. W. Wang, “Elastic, electronic and optical properties of two-dimensional graphyne sheet”, J. Phys. Chem. C, 115, 20466 (2011). [64]C. Li, Jingbo Li*, F. M. Wu, S. S. Li and J. B. Xia “High Capacity Hydrogen Storage in Ca Decorated Graphyne: A First-Principles Study”, J. Phys. Chem. C, 115, 23221 (2011). [65]M. Wang, Y. Wang, and Jingbo Li*, “ZnO nanowire arrays coating on TiO2 nanoparticles as composite photoanode for a high efficiency DSSC”, Chem Comm., 47, 11246 (2011). [66]M. Q. Meng, H. W. Peng, Y. Q. Gai, and Jingbo Li*, “Influence of ZnS and MgO shell on the photoluminescence properties of ZnO core/shell nanowires”, J. Phys. Chem. C, 114, 1467 (2010). [67]H. X. Deng, S. S. Li, and Jingbo Li*, “Quantum Confinement Effects and Electronic Properties of SnO2 Quantum Wires and Dots”, J. Phys. Chem. C, 114, 4841 (2010). [68]M. Q. Meng, L. M. Tang, and Jingbo Li*, “Room-Temperature Ferromagnetism in Co-doped In2O3 Nanocrystals”, J. Phys. Chem. C, 114, 17569 (2010). [69]H. X. Deng, Jingbo Li*，S. S. Li, J. B. Xia, L. W. Wang, and, S.-H. Wei, “Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs”, Phys. Rev. B, 82, 193204 (2010). [70]L. X. Zhang, X. F. Zhou, H. T. Wang, J. J. Xu, Jingbo Li, E. G. Wang, S.-H. Wei*, “Origin of insulating behavior of the p-type LaAlO3/SrTiO3 interface: Polarization-induced asymmetric distribution of oxygen vacancies”, Phys. Rev. B 82, 125412 (2010). [71]H. X. Deng, Jingbo Li*，S. S. Li, J. B. Xia, A. Walsh, and, S.-H. Wei*, “Origin of antiferromagnetism in CoO: A density functional theory study”, Appl. Phys. Lett. 96, 162508(2010). [72]Z. G. Wang*, Jingbo Li*, F. Gao, and W. J. Weber, “Codoping of magnesium with oxygen in GaN nanowires”, Appl. Phys. Lett. 96, 103112 (2010). [73]Z. G. Wang*, Jingbo Li, F. Gao, W. J. Weber, “Charge Separation of Wurtzite/Zinc-Blende Heterostructures in GaN Nanowires”, ChemPhysChem, 11, 3329 (2010). [74]Z. G. Wang*, C.L. Zhang, Jingbo Li, F. Gao, W. J. Weber, “First principles study of electronic properties of gallium nitride nanowires grown along different crystal directions”, Computational Materials Science, 50, 344 (2010). [75]H. W. Peng, H. J. Xiang, S. H. Wei*, S. S. Li, J. B. Xia, and Jingbo Li*, “Origin and enhancement of hole-induced ferromagnetism in first-row d0 semiconductors”, Phys. Rev. Lett. 102, 017201 (2009). [76]Y. Q. Gai, Jingbo Li*, S. S. Li, J. B. Xia, and S. H. Wei*, “Design of narrow-gap TiO2 for enhanced photoelectrochecmical activity: A passivated codoping approach”, Phys. Rev. Lett. 102, 036402 (2009). [77]H. W. Peng, Jingbo Li*, S. S. Li, and J. B. Xia, “Possible origin of ferromagnetism in undoped anatase TiO2”, Phys. Rev. B , 79, 092411 (2009). [78]Z. G. Wang*, F. Gao, Jingbo Li, X. T. Zu, and W. J. Weber “Controlling Electronic Structures by Electron Irradiation in Single-walled SiC nanotubes: A first Principles Molecular Dynamics Study”, Nanotechnology, 20, 075708 (2009). [79]Z. G. Wang*, S. Wang, Jingbo Li*, F. Gao*, and W. J. Weber “Structure and electronic properties of saturated and unsaturated gallium nitride nanotubes”, J. Phys. Chem. C, 113, 19281 (2009). [80]Y. Q. Gai, H. W. Peng, and Jingbo Li*, “Electronic Properties of Nonstoichiometric PbSe Quantum Dot from Frst Principles”, J. Phys. Chem. C, 113,21506 (2009). [81]Y. Q. Gai, Jingbo Li*, S. S. Li, J. B. Xia, Y. Yan, S.-H. Wei*, “Design of shallow acceptors in ZnO through compensated donor-acceptor complexes: A density functional calculation”, Phys. Rev. B, 80, 153201 (2009). [82]Y. H. Li, A. Walsh, S. Chen, W. J. Yin, J. H. Yang, Jingbo Li, J. Da Silva, X. G. Gong, and S-H. Wei*, “Revised ab initio nature band offsets of all group IV, II-VI, and III-V semiconductors”, Appl. Phys. Lett. 94, 212109 (2009). [83]L. X. Zhang, J. L. F Da Sliva, Jingbo Li, Y. Yan, T. A. Gessert, and S. H. Wei*, “Effect of Copassivation of Cl and Cu on CdTe Grain Boundaries”, Phys. Rev. Lett. 101, 155501 (2008). [84]H. J. Xiang, S-. H. Wei*, J. L. F Da Sliva, and Jingbo Li*, “Enhanced alloy solubility and band gap tenability in ternary InGaN nanowires”, Phys. Rev. B 78, 193301, (2008). [85]Jingbo Li*, S. H. Wei, S. S. Li, and J. B. Xia, “Origin of the doping bottleneck in semiconductor quantum dots: A first-principles study”, Phys. Rev. B 77, 113304 (2008). [86]H. W. Peng and Jingbo Li*, “Quantum Confinement and Electronic Properties of Rutile TiO2 Nanowires”, J. Phys. Chem. C 112, 20241 (2008). [87]H. W. Peng, Jingbo Li*, S. S. Li, and J. B. Xia, “First-Principles Study on Rutile TiO2 Quantum Dots”, J. Phys. Chem. C 112, 13964 (2008). [88]X. W. Zhang, Jingbo Li*, S. S. Li, and J. B. Xia, “Electronic structure and optical gain of wurtzite ZnO nanowires”, Appl. Phys. Lett. 92, 181101 (2008). [89]P. Ma, Y. Q. Gai, J. X. Wang, F. H. Yang, Y. P. Zeng, J. M. Li, Jingbo Li*, “Enhanced electroluminescence intensity of InGaN/GaN multi-quantum-wells based on Mg-doped GaN annealed in O2”, Appl. Phys. Lett. 93, 102112 (2008). [90]F. Wang, Jingbo Li*, S. S. Li, J. B. Xia, and S.H.Wei, “Mg acceptor energy levels in AlInGaN quaternary alloys”, Phys. Rev. B 77, 113202 (2008). [91]Y. Q. Gai, B. Yao*, Z. P. Wei, Y. F. Li, Y. M. Lu, D. Z. Shen, J. Y. Zhang, D. Z. Zhao, X. W. Fan, Jingbo Li* and J. B. Xia, “Effect on nitrogen acceptor as Mg is alloyed into ZnO”, Appl. Phys. Lett. 92, 062110 (2008). [92]F. Wang, H. Yu, Jingbo Li and Q. Hang, D. Zemlyanov, P. C. Gibbons, L. W. Wang, and W. E Buhro*, “Spectroscopic properties of colloidal InP quantum wires”, J. Am. Chem. Soc. 129, 14327 (2007). [93]Q. Xu, J. W. Luo, S. S. Li, J. B. Xai, Jingbo Li*, and S. H.Wei, “Chemical trends of defect formation in Si quantum dots: The case of group-III and group-V dopants”, Phys. Rev. B 75, 235304 (2007). [94]F. Wang, S. S. Li, J. B. Xai, H. X. Jiang, J. Y. Lin, Jingbo Li, and S. H.Wei*, “Effects of the wave function localization in AlxInyGa1-x-yN quaternary alloys”, Appl. Phys. Lett. 91, 061125 (2007). |
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